2016. E. Capogreco, J. Lisoni, A. Arreghini, C.-L. Tan, G. van den bosch, J. van Houdt, Feasibility of InxGa1-xAs high mobility channel for 3-D NAND Memory. Accepted in IEEE Trans. Electr. Dev.

2016 F. Cerbu, O. Madia, D. Andreev, S. Fadida, M. Eizenberg, L. Breuil, J.G. Lisoni, J. Kittl, J. Strand, A. Shluger, V. Afanas’ev, M. Houssa, A. Stesmans. Intrinsic electron traps in atomic layer deposited HfO2 insulators. Appl. Phys. Lett. 108(Vol):222901 (página inicial).

2016. EDITOR PRINCIPAL INVITADO. Lisoni, Judit.. Special issue in Physica Status Solidi A: Applications and Materials Science. En Non-volatile memories: materials, nanostructures and integration a. Wiley-VCH Verlag GmbH & Co. Primera Edición. Weinheim. Alemania.

2016. ARTÍCULO PRINCIPAL. Judit G. Lisoni , Laurent Breuil , Pieter Blomme , Johan Meersschaut , Andreas Bergmaier , Günther Dollinger , Geert Van den Bosch , Jan Van Houdt. Materials selection for hybrid floating gate memory applications. Phys. Status Solidi A. 213:237.

2016. Cerbu, F. , Andreev, DV. , Lisoni, J. , Breuil, L. , Afanas ev, VV. , Stesmans, A. , Houssa, M. Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices. Phys. Status Solidi A. 213:265.

2015. Breuil, L. , Lisoni, JG. , Blomme, P. , Tan, CL. , Van den Bosch, G. , Van Houdt, J. Intergate Dielectric Engineering Toward Large P/E Window Planar NAND Flash. IEEE Trans. Electron. Dev. 62:1484.

2014. Nyns, L. , Lisoni, JG. , Van den Bosch, G. , Van Elshocht, S. , Van Houdt, J. Atomic layer deposition of scandium-based oxides. Phys. Status Solidi A. 211:409.

2014. Breuil, L. , Lisoni, JG. , Blomme, P. , Van den Bosch, G. , Van Houdt, J. HfO2 Based High-k Inter-Gate Dielectrics for Planar NAND Flash Memory. IEEE Electron Dev. Lett. 35:45.

2014. Lima, LPB. , Dekkers, HFW. , Lisoni, JG. , Diniz, JA. , Van Elshocht, S. , De Gendt, S. Metal gate work function tuning by Al incorporation in TiN. J. Appl. Phys. 115:74504.

2013. Lisoni, JG. , Breuil, L. , Nyns, L. , Blomme, P. , Van den Bosch, G. , Van Houdt, J. High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash. Microelectron. Eng. 109:220.

2012. Lisoni, JG. , Goux, L. , Hoffmann, T. , Diaz-Droguett, DE. , Jurczak, M. Influence of the microstructure on the oxidation of Ni thin films. Corrosion Science. 59:282.

2012. Mujica, N. , Cerda, MT. , Espinoza, R. , Lisoni, JG. , Lund, F. Ultrasound as a probe of dislocation density in aluminum. Acta Materialia. 60:5828.

2010. Goux, L. , Polspoel, W. , Lisoni, JG. , Chen, YY. , Pantisano, L. , Wang, XP. , Vandervorst, W. , Jurczak, M. , Wouters, DJ. Bipolar Switching characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni. Journal of the Electrochemical Society. 157:G187-G192.

2010. Goux, L. , Lisoni, JG. , Jurczak, M. , Wouters, DJ. , Courtade, L. , Muller, C. Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers. Journal of Applied Physics. 107:24512.

2010. Henriquez, R. , Cancino, S. , Espinosa, A. , Flores, M. , Hoffmann, T. , Kremer, G. , Lisoni, JG. , Moraga, L. , Morales, R. , Oyarzun, S. , Suarez, MA. , Zuniga, A. , Munoz, RC. Electron grain boundary scattering and the resistivity of nanometric metallic structures. Physical Review B. 82:113409.

2009. Goux, L. , Castro, DT. , Hurkx, GAM. , Lisoni, JG. , Delhougne, R. , Gravesteijn, DJ. , Attenborough, K. , Wouters, DJ. Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell. IEEE Transactions on Electron Devices. 56:354.

2009. Goux, L. , Lisoni, JG. , Wang, XP. , Jurczak, M. , Wouters, DJ. Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells. IEEE Transactions on Electron Devices. 56:2363.

2009. Goux, L. , Gillie, T. , Castro, DT. , Hurkx, GAM. , Lisoni, JG. , Delhougne, R. , Gravesteijn, DJ. , De Meyer, K. , Attenborough, K. , Wouters, DJ. Transient Characteristics of the Reset Programming of a Phase-Change Line Cell and the Effect of the Reset Parameters on the Obtained State. IEEE Transactions on Electron Devices. 56:1499.

2008. Goux, L. , Lisoni, JG. , Gille, T. , Attenborough, K. , Wouters, DJ. Low-voltage resistive switching within an oxygen-rich Cu/SbTe interface for application in nonvolatile memory. Electrochemical and Solid State Letters. 11:H245.

2008. Courtade, L. , Turquat, C. , Muller, C. , Lisoni, JG. , Goux, L. , Wouters, DJ. , Goguenheim, D. , Roussel, P. , Ortega, L. Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures. Thin Solid Films. 516:4083.

2007. Lisoni, JG. , Johnson, JA. , Goux, L. , Paraschiv, V. , Maes, D. , Van der Meeren, H. , Willegems, M. , Haspeslagh, L. , Wouters, DJ. , Caputa, C. , Zambrano, R. , Turquat, C. , Muller, C. Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures. Journal of Applied Physics. 101:014908.

2006. Goux, L. , Xu, Z. , Paraschiv, V. , Lisoni, JG. , Maes, D. , Haspeslagh, L. , Groeseneken, G. , Wouters, DJ. Influence of different deposition conditions of top and bottom electrode on the reliability ofSr0.8Bi2.2Ta2O9 ferroelectric capacitors. Solid-State Electronics. 50:1227.

2006. PUBLICACIÓN INVITADA. Wouters, DJ. , Maes, D. , Goux, L. , Lisoni, JG. , Paraschiv, V. , Johnson, JA. , Schwitters, M. , Everaert, JL., Boullart, W. , Schaekers, M. , Willegems, M. Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory. Journal of Applied Physics. 100:051603.

2006. Lisoni, JG. , Johnson, JA. , Everaert, JL. , Goux, L. , Vander Meeren, H. , Paraschiv, V. , Willegems, M. , Maes, D. , Haspeslagh, L. , Wouters, DJ. , Caputa, C. , Zambrano, R. Mechanical stability of Ir electrodes used for stacked SrBi2Ta2O9 ferroelectric capacitors. Integrated Ferroelectrics. 81:37.

2006. Condorelli, GG. , Favazza, M. , Bedoya, C. , Baeri, A. , Anastasi, G. , Lo Nigro, R. , Menou, N. , Muller, C. , Lisoni, JG. , Wouters, D. , Fragala, IL. Metal-organic chemical vapor deposition of ferroelectric SrBi2Ta2O9 films from a fluorine-containing precursor system. Chemistry of Materials. 18:1016.

2006. Menou, N. , Muller, C. , Goux, L. , Barrett, R. , Lisoni, JG. , Schwitters, M. , Wouters, DJ. Microstructural analysis of integrated pin-shaped two-dimensional and three-dimensional ferroelectric capacitors from microfocused synchrotron X-ray techniques. Journal of Applied Crystollography. 39:376.

2006. Pantisano, L. , Schram, T. , Li, Z. , Lisoni, JG. , Pourtois, G. , De Gendt, S., Brunco, DP. , Akheyar, A. , Afanas ev, VV. , Shamuilia, S. , Stesmans, A. Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients. Applied Physics Letters. 88:243514.

2006. Goux, L. , Maes, D. , Lisoni, JG. , Vander Meeren, H. , Paraschiv, V. , Haspeslagh, L. , Artoni, C. , Russo, G., Zambrano, R. , Wouters, DJ. Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 ►m CMOS technology. Microelectronic Engineering. 83:2027.

2015- presente, Implementación del Laboratorio de Nanotecnología en la Universidad Austral de Chile. Apoyo económico DID. Investigador principal.

2011 – 2015, Programa de financiación interno imec ”IIAP IMEC’s on Advanced Flash Memory. (Institución Principal: imec). Investigador senior.

2010 – 2012, Universidad Católica de Lovaina (KU Leuven) / Universidad de Chile. ”Explorative Scientific Cooperation Programme 2010-2011 Joint project proposal: Exploration of hybrid ferroelectric/ferromagnetic thin-film structures: towards synthetic multiferroics. (Institución Principal: Universidad de Chile)”. Investigador Principal.

2013 – 2013, Comunidad Europea a través de su programa SPIRIT (European Community Integrating Activity Support of Public and Industrial Research Using Ion Beam Technology (SPIRIT), contrato Nr. 227012. ”High resolution elastic recoil detection analysis to investigate high-k/metal-gates stacks for floating gate applications. Institución Principal: imec (www.imec.be). Investigador Principal.

2009 – 2011, FONDECYT REGULAR 1090332. ”Oxidation behavior of systems with low dimensionality: application to thin films and nanoparticles of Ni. (Institución Principal: Universidad de Chile). Investigador Responsable.

2008 – 2009, Comunidad Europea. Programa Eureka Cluster. ”MEDEA+ MaxCaps (MAterials for neXt generation CAPacitors and memorieS). (Institución Principal: imec). Investigador senior.

2005 – 2008, Programa de propiedad intelectual de la empresa NXP (NXP Proprietary Program; Institución Principal: imec). Investigador senior.

2005 – 2009, Programa de financiación interno imec. ”NiOx and WOx materials developments for resistive memories (ReRAM; Institución Principal: Universidad de Chile)”. Investigador senior.

Dr. Th. Hoffmann, profesor adjunto ICFM, Facultad de Ciencias-UACh, colaborador en la caracterización y modelamiento de las propiedades mecánicas de esponjas biopoliméricas.

Prof. Dr. Ignacio Moreno, líder del grupo del Laboratorio de Polímeros, Facultad de Ciencias, UACh. Responsable de las caracterizaciones mecánicas de espumas biopoliméricas con aplicaciones en sensores electrocrómicos, quimioquímicos e ingeniería de tejido humano.

Prof. Dr. Alfredo Aguilera, Dr. Francisco Burgos y Dr. Aldo Rolleri, grupo de Tecnología de Procesamiento de Madera, Facultad de Ciencias Forestales y Recursos Naturales, UACh. Caracterización física-mecánica de la madera.

Dr. Jürgen Schubert, Research Center Jülich-Germany, experto en la deposición y caracterización de óxidos funcionales (http://orcid.org/0000-0003-0185-6794; http://www.fz-juelich.de/pgi/pgi-9/EN/Leistungen/01-Facilities/01-PLD/_node.html).

Grupo de dispositivos NAND Flash, imec, Bélgica. Integración de NAND vertical con canales de materiales III-V.